Charge Transport and Thermoelectric Properties of Mn-Doped Tetrahedrites Cu12-xMnxSb4S13

Mn-doped tetrahedrites Cu12-xMnxSb4S13 (0.1 ≤ x 0.4) were synthesized by mechanical alloying (MA) and sintered hot pressing (HP). A single tetrahedrite phase was MA without post-annealing, it stable any changes after HP. The hot-pressed specimens had a relative density higher than 98.6%. lattice constant of the samples increased compared to that undoped Cu12Sb4S13, but no significant change in observed with Mn content. All acted as p-type semiconductors, confirmed from positive Hall Seebeck coefficient values. increasing temperature decreased content; maximum values 200−219 μVK-1 obtained at 323−723 K for = 0.1. Electrical conductivity highest electrical (1.76−2.45) × 104 Sm-1 0.4. As result, Cu11.6Mn0.4Sb4S13 exhibited power factor 0.80 mWm-1K-2 723 K. content increased, both electronic thermal conductivities thus, total lowest 0.48–0.63Wm-1K-1 323–723 dimensionless figure merit 0.75 Cu11.7Mn0.3Sb4S13. MA-HP process is suitable preparing doped exhibiting excellent thermoelectric performance.